SiC capabilities 10x the breakdown electrical discipline power of silicon, making it possible to configure bigger voltage (600V to thousands of V) power devices via a thinner drift layer and better impurity concentration. Given that a lot of the resistance component of high-voltage devices is located in the drift layer https://www.facebook.com/permalink.php?story_fbid=pfbid0VCARyNTxLQN8hADkVfrhkW4wGZovySkKkrVrvNWaDKt4A6wDueGSLFr7dSah3zWDl&id=61560512640678&__cft__[0]=AZWk3NSjriI2DDQIZSnJw8fTQXTCqq9FTMSe7hBqPoWXLy0scYS1gc8GcBOKOcHp8_VG_gsW0vQ0qZIaXv4i0adkCWPPpO93QajcVNONbLwjxQMx4UPeTkfBOjhwTaSzKkJE0FYSygazT4LAjNjYgpmNfYIKFmqAn3GVDElKfNf1ny4p0C-Fr23KETAyF7gp9c0BYVWvMamUGRlgpWuxtfxa&__tn__=%2CO%2CP-R